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| PD-94764L RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary IRHLUB7970Z4 JANSR2N7626UB 60V, P-CHANNEL REF: MIL-PRF-19500/745 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUB7970Z4 100K Rads (Si) 1.4 -0.53A JANSR2N7626UB IRHLUB7930Z4 300K Rads (Si) 1.4 -0.53A JANSF2N7626UB Refer to Page 11 for 3 Additional Part Numbers IRHLUBN7970Z4, IRHLUBC7970Z4, IRHLUBCN7970Z4 UB (SHIELDED METAL LID) Features: International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLUB770Z4, IRHLUBN770Z4 IRHLUBC770Z4 & IRHLUBCN770Z4 Absolute Maximum Ratings Parameter ID @ VGS = -4.5V, TC = 25C ID @ VGS = -4.5V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -0.53 -0.33 -2.12 0.57 0.0045 10 33.5 -0.53 0.06 -4.4 -55 to 150 300 (for 5s) 43 (Typical) Pre-Irradiation Units A W W/C V mJ A mJ V/ns C mg www.irf.com 1 09/15/10 IRHLUB7970Z4, JANSR2N7626UB Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Min -60 Typ Max Units -- -0.055 -- -- 3.1 -- -- -- -- -- -- -- -- -- -- -- -- 8.4 167 43 10 56 -- -- 1.40 -2.0 -- -- -1.0 -10 -100 100 3.6 1.5 1.8 22 22 27 27 -- -- -- -- V V/C V mV/C S A nA Test Conditions VGS = 0V, ID = -250A Reference to 25C, ID = -1.0mA VGS = -4.5V, ID = -0.33A A VDS = VGS, ID = -250A VDS = -10V, IDS = 0.33A A VDS= -48V ,VGS=0V VDS = -48V, VGS = 0V, TJ = 125C VGS = -10V VGS = 10V VGS = -4.5V, ID = -0.53A VDS = -30V VDD = -30V, ID = -0.53A, VGS = -5.0V, RG = 24 BV DSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -1.0 -- VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 0.23 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ciss C oss C rss Rg Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance -- -- -- -- -- -- -- -- -- -- -- -- -- nC ns nH pF Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 100KHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- -0.53 -2.12 -5.0 50 25 Test Conditions A V ns nC Tj = 25C, IS = -0.53A, VGS = 0V Tj = 25C, IF = -0.53A, di/dt -100A/s VDD -25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJA Junction-to-Ambient Min Typ Max Units -- -- 220 C/W Test Conditions Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation Radiation Characteristics IRHLUB7970Z4, JANSR2N7626UB International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-state Resistance (UB) Diode Forward Voltage Up to 300K Rads (Si)1 Min -60 -1.0 -- -- -- -- -- -- Max Units V nA A V Test Conditions VGS = 0V, ID = -250A VGS = VDS, ID = -250A VGS = -10V VGS = 10V VDS = -48V, VGS = 0V VGS = -4.5V, ID = -0.33A VGS = -4.5V, ID = -0.33A VGS = 0V, ID = -0.53A -- -2.0 -100 100 -1.0 1.36 1.40 -5.0 1. Part Numbers IRHLUB7970Z4, IRHLUB7930Z4 and additional part numbers listed on page 11. International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area LET (MeV/(mg/cm )) 38 5% 62 5% 85 5% 2 Energy (MeV) 300 7.5% 355 7.5% 380 7.5% Range (m) 38 7.5% 33 7.5% 29 7.5% @VGS= @VGS= VDS (V) @VGS= @VGS= @VGS= @VGS= 0V -60 -60 -60 2V -60 -60 -60 4V -60 -60 -60 5V -60 -60 -60 6V -60 -60 - 7V -50 - -70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 6 7 Bias VGS (V) Bias VDS (V) LET=38 5% LET=62 5% LET=85 5% Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHLUB7970Z4, JANSR2N7626UB Pre-Irradiation 10 -I D, Drain-to-Source Current (A) VGS TOP -10V -5.0V -4.5V -3.5V -3.0V -2.75V -2.50V BOTTOM -2.25V 10 -I D, Drain-to-Source Current (A) VGS -10V -5.0V -4.5V -3.5V -3.0V -2.75V -2.50V BOTTOM -2.25V TOP 1 1 -2.25V -2.25V 0.1 0.1 1 60s PULSE WIDTH Tj = 25C 10 100 0.1 0.1 1 -V DS , Drain-to-Source Voltage (V) 60s PULSE WIDTH Tj = 150C 10 100 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -0.53A 1.6 -ID, Drain-to-Source Current ( ) 1.2 1.0 TJ = 150C T J = 25C VDS = -25V 15 60s PULSE WIDTH 0.8 0.4 VGS = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1.5 2.0 2.5 3.0 3.5 4.0 -VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHLUB7970Z4, JANSR2N7626UB 3.0 2.5 2.0 1.5 1.0 ID = -0.53A RDS(on), Drain-to -Source On Resistance ( ) RDS(on), Drain-to -Source On Resistance () 3.5 3.0 TJ = 150C 2.5 2.0 T J = 150C 1.5 T J = 25C Vgs = -4.5V 0.5 0 0.5 1.0 1.5 2.0 2.5 -I D, Drain Current (A) 1.0 T J = 25C 0.5 2 3 4 5 6 7 8 9 10 11 12 -VGS, Gate -to -Source Voltage (V) Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current -V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 75 3.0 -V GS(th) Gate threshold Voltage (V) ID = -1.0mA 70 2.5 2.0 65 1.5 1.0 60 0.5 ID = -50A ID = -250A ID = -1.0mA ID = -150mA -60 -40 -20 0 20 40 60 80 100 120 140 160 55 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 T J , Temperature ( C ) T J , Temperature ( C ) Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature Fig 8. Typical Threshold Voltage Vs Temperature www.irf.com 5 IRHLUB7970Z4, JANSR2N7626UB Pre-Irradiation 250 -VGS , Gate-to-Source Voltage (V) 200 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 12 ID = -0.53A 10 VDS =-48V VDS =-30V VDS =-12V C, Capacitance (pF) Ciss 150 8 6 100 Coss 4 50 2 Crss 0 0 FOR TEST CIRCUIT SEE FIGURE 13 0 1 2 3 4 5 6 1 10 100 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 10 -I SD , Reverse Drain Current ( ) 0.6 1 T J = 25C -ID , Drain Current (A) T J = 150C 0.5 0.4 0.2 0.1 0.1 0.01 0 1 2 3 VGS = 0V 0.0 4 5 25 50 75 100 125 150 -V SD , Source-to-Drain Voltage (V) TC , Case Temperature ( C) Fig 11. Typical Source-Drain Diode Forward Voltage Fig 12. Maximum Drain Current Vs. Case Temperature 6 www.irf.com Pre-Irradiation IRHLUB7970Z4, JANSR2N7626UB 10 80 EAS , Single Pulse Avalanche Energy (mJ) -I D, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 70 60 50 40 30 20 10 0 25 50 75 1 100s 1ms 10ms ID TOP -0.53A -0.34A BOTTOM -0.24A 0.1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 DC 100 1000 0.01 100 125 150 -VDS , Drain-to-Source Voltage (V) Starting T J , Junction Temperature (C) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy Vs. Drain Current 1000 Thermal Response ( Z thJA ) 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 10 1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 7 IRHLUB7970Z4, JANSR2N7626UB Pre-Irradiation VDS L I AS VDD A RG D.U.T. IAS VGS -20V DRIVER 0.01 tp tp 15V V(BR)DSS Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. -4.5V QG 12V .2F 50K .3F VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 17a. Basic Gate Charge Waveform RD V DS VGS Fig 17b. Gate Charge Test Circuit td(on) tr t d(off) VGS D.U.T. V DD 10% VGS Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit 8 + - RG 90% VDS Fig 18b. Switching Time Waveforms www.irf.com + D.U.T. - QGS QGD VDS tf Pre-Irradiation IRHLUB7970Z4, JANSR2N7626UB Case Outline and Dimensions -- UB (Shielded Metal Lid Connected to 4th Pad) 3.25 [.128] 2.92 [.115] 3X 0.61 [.024] 0.41 [.016] 0.30 R REF. [.012 R REF.] 4 2.74 [.108] 2.41 [.095] 3 2 1 3X 0.96 [.038] 0.56 [.022] 0.55 R MIN. [.022 R MIN.] 3X 0.355 [.014] MIN. 1.42 [.056] 1.17 [.046] 2.01 [.079] 1.81 [.071] 0.99 [.039] 0.89 [.035] ME T AL LID NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994 2. CONT ROLLING DIMENSION: INCH. 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. HAT CHED AREAS ON PACKAGE DENOTE MET ALIZ AT ION AREAS . 5. PAD AS SIGNMENT S: 1 = GAT E, 2 = S OURCE, 3 = DRAIN, 4 = S HIELDING CONNECT ED T O T HE LID. 4 Case Outline and Dimensions -- UBN (Isolated Metal Lid, No 4th Pad) 3.25 [.128] 2.92 [.115] 3X 0.61 [.024] 0.41 [.016] 0.96 [.038] 0.56 [.022] 3X 2.74 [.108] 2.41 [.095] 3 2 1 3X 0.355 [.014] MIN. 1.42 [.056] 1.17 [.046] 2.01 [.079] 1.81 [.071] 0.99 [.039] 0.89 [.035] MET AL LID NOT ES: 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994 2. 3. 4. 5. CONTROLLING DIMENS ION: INCH. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES ]. HATCHED AREAS ON PACKAGE DENOT E MET ALIZ ATION AREAS . PAD AS S IGNMENTS : 1 = GATE, 2 = SOURCE, 3 = DRAIN, 4 = IS OLAT ED METAL LID. 4 www.irf.com 9 IRHLUB7970Z4, JANSR2N7626UB Pre-Irradiation Case Outline and Dimensions--UBC (Shielded Ceramic Lid Connected to 4th Pad) 3.25 [.128] 2.92 [.115] 3X 0.61 [.024] 0.41 [.016] 0.30 R REF. [.012 R REF.] 4 2.74 [.108] 2.41 [.095] 3 2 1 3X 0.96 [.038] 0.56 [.022] 0.55 R MIN. [.022 R MIN.] 3X 0.355 [.014] MIN. 1.75 [.069] 1.40 [.055] 0.99 [.039] 0.89 [.035] 2.01 [.079] 1.81 [.071] CERAMIC LID NOTES : 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994 2. CONTROLLING DIMENS ION: INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. HATCHED AREAS ON PACKAGE DENOTE METALIZATION AREAS. 5. PAD ASSIGNMENTS : 1 = GAT E, 2 = S OURCE, 3 = DRAIN, 4 = SHIELDING CONNECTED TO T HE LID. 4 Case Outline and Dimensions -- UBCN (Isolated Ceramic Lid, No 4th Pad) 3.25 [.128] 2.92 [.115] 3X 0.61 [.024] 0.41 [.016] 0.96 [.038] 0.56 [.022] 3X 2.74 [.108] 2.41 [.095] 3 2 1 3X 0.355 [.014] MIN. 1.75 [.069] 1.40 [.055] 0.99 [.039] 0.89 [.035] 2.01 [.079] 1.81 [.071] CERAMIC LID NOT ES : 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994 2. 3. 4. 5. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES ]. HAT CHED AREAS ON PACKAGE DENOT E MET ALIZ ATION AREAS. PAD AS SIGNMENT S: 1 = GAT E, 2 = SOURCE, 3 = DRAIN, 4 = ISOLATED CERAMIC LID. 4 10 www.irf.com Pre-Irradiation IRHLUB7970Z4, JANSR2N7626UB Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, L= 238 mH Peak IL =- 0.53A, VGS = -10V ISD -0.53A, di/dt -100A/s, VDD -60V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. -10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Additional Product Summaries (continued from page 1 and 3) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUBN7970Z4 100K Rads (Si) 1.4 -0.53A JANSR2N7626UBN IRHLUBN7930Z4 300K Rads (Si) 1.4 -0.53A JANSF2N7626UBN UBN (ISOLATED METAL LID) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUBC7970Z4 100K Rads (Si) 1.4 -0.53A JANSR2N7626UBC IRHLUBC7930Z4 300K Rads (Si) 1.4 -0.53A JANSF2N7626UBC UBC (SHIELDED CERAMIC LID) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHLUBCN7970Z4 100K Rads (Si) 1.4 -0.53A JANSR2N7626UBCN IRHLUBCN7930Z4 300K Rads (Si) 1.4 -0.53A JANSF2N7626UBCN UBCN (ISOLATED CERAMIC LID) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/2010 www.irf.com 11 |
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